FDN360P 数据手册
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FDN360P 6 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDN360P
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 500mW
- Total Gate Charge (Qg@Vgs): 9nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 298pF@15V
- Continuous Drain Current (Id): 2A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,2A
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 298pF @ 15V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: FDN360
- detail: P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3